onsemi
HGT1S12N60C3DS
HGT1S12N60C3DS ECAD Model
HGT1S12N60C3DS Attributes
| Type | Description | Select |
|---|---|---|
| Power Dissipation (Pd) | 104W | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Collector Current (Ic) | 24A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Input Capacitance (Cies@Vce) | - | |
| Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@15V,15A | |
| Total Gate Charge (Qg@Ic,Vge) | 71nC | |
| Diode Reverse Recovery Time (Trr) | 32ns | |
| Turn?on Switching Loss (Eon) | - |
HGT1S12N60C3DS Overview
onsemi offers a wide range of electronic components for various applications, and one such component is the HGT1S12N60C3DS. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the HGT1S12N60C3DS provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
If you're looking for comprehensive data on the HGT1S12N60C3DS to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.
onsemi is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.
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47,580 In Stock
Pricing (USD)
| QTY | Unit Price | Ext Price |
|---|---|---|
| 1+ | $5.1602 | $5.1602 |
| 10+ | $5.1047 | $51.0471 |
| 100+ | $4.8273 | $482.7282 |
| 1000+ | $4.5499 | $2,274.9260 |
| 10000+ | $4.1615 | $4,161.4500 |
| The price is for reference only, please refer to the actual quotation! | ||