HGT1S10N120BNST
HGT1S10N120BNST
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HGT1S10N120BNST


HGT1S10N120BNST
F2454-HGT1S10N120BNST
Active
IGBT 1200V 35A 298W TO263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

HGT1S10N120BNST ECAD Model


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HGT1S10N120BNST Attributes


Type Description Select
Series -
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 35 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 298 W
Switching Energy 320µJ (on), 800µJ (off)
Input Type Standard
Gate Charge 100 nC
Td (on/off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK (TO-263)

HGT1S10N120BNST Datasheet Download


HGT1S10N120BNST Overview


onsemi offers a wide range of electronic components for various applications, and one such component is the HGT1S10N120BNST. This component can be purchased from FMALL, a reputable supplier of electronic components.

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39,360 In Stock


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Unit Price: $3.7744
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $3.5102 $3.5102
10+ $3.4724 $34.7245
100+ $3.2837 $328.3728
1000+ $3.0950 $1,547.5040
10000+ $2.8308 $2,830.8000
The price is for reference only, please refer to the actual quotation!

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