
onsemi
HGT1S10N120BNST
HGT1S10N120BNST ECAD Model
HGT1S10N120BNST Attributes
Type | Description | Select |
---|---|---|
Series | - | |
IGBT Type | NPT | |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
Current - Collector (Ic) (Max) | 35 A | |
Current - Collector Pulsed (Icm) | 80 A | |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A | |
Power - Max | 298 W | |
Switching Energy | 320µJ (on), 800µJ (off) | |
Input Type | Standard | |
Gate Charge | 100 nC | |
Td (on/off) @ 25°C | 23ns/165ns | |
Test Condition | 960V, 10A, 10Ohm, 15V | |
Reverse Recovery Time (trr) | - | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Supplier Device Package | D²PAK (TO-263) |
HGT1S10N120BNST Datasheet Download
HGT1S10N120BNST Overview
onsemi offers a wide range of electronic components for various applications, and one such component is the HGT1S10N120BNST. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the HGT1S10N120BNST provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
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39,360 In Stock






Pricing (USD)
QTY | Unit Price | Ext Price |
---|---|---|
1+ | $3.5102 | $3.5102 |
10+ | $3.4724 | $34.7245 |
100+ | $3.2837 | $328.3728 |
1000+ | $3.0950 | $1,547.5040 |
10000+ | $2.8308 | $2,830.8000 |
The price is for reference only, please refer to the actual quotation! |