onsemi
FQPF27P06
FQPF27P06 ECAD Model
FQPF27P06 Attributes
| Type | Description | Select |
|---|---|---|
| Series | QFET® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 8.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V | |
| Vgs (Max) | ±25V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 47W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220F-3 | |
| Package / Case | TO-220-3 Full Pack |
FQPF27P06 Datasheet Download
FQPF27P06 Overview
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