
onsemi
FQN1N60CTA
FQN1N60CTA ECAD Model
FQN1N60CTA Attributes
Type | Description | Select |
---|---|---|
Series | QFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 600 V | |
Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 11.5Ohm @ 150mA, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 1W (Ta), 3W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-92-3 | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
FQN1N60CTA Datasheet Download
FQN1N60CTA Overview
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