FQB4N80TM
FQB4N80TM
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onsemi

FQB4N80TM


FQB4N80TM
F2454-FQB4N80TM
Active
MOSFET N-CH 800V 3.9A D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FQB4N80TM ECAD Model


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FQB4N80TM Attributes


Type Description Select
Series QFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FQB4N80TM Datasheet Download


FQB4N80TM Overview


onsemi offers a wide range of electronic components for various applications, and one such component is the FQB4N80TM. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Unit Price: $0.982
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.9133 $0.9133
10+ $0.9034 $9.0344
100+ $0.8543 $85.4340
1000+ $0.8052 $402.6200
10000+ $0.7365 $736.5000
The price is for reference only, please refer to the actual quotation!

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