FDFMA2P859T
FDFMA2P859T
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FDFMA2P859T


FDFMA2P859T
F2454-FDFMA2P859T
Active
MOSFET P-CH 20V 3A MICROFET
6-UDFN Exposed Pad

FDFMA2P859T ECAD Model


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FDFMA2P859T Attributes


Type Description Select
Series PowerTrench®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 120mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 435 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package MicroFET 2x2 Thin
Package / Case 6-UDFN Exposed Pad

FDFMA2P859T Datasheet Download


FDFMA2P859T Overview


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31,690 In Stock


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Unit Price: $0.276
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.2567 $0.2567
10+ $0.2539 $2.5392
100+ $0.2401 $24.0120
1000+ $0.2263 $113.1600
10000+ $0.2070 $207.0000
The price is for reference only, please refer to the actual quotation!

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