
onsemi
5LN01C-TB-E
5LN01C-TB-E ECAD Model
5LN01C-TB-E Attributes
Type | Description | Select |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 50 V | |
Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V | |
Rds On (Max) @ Id, Vgs | 7.8Ohm @ 50mA, 4V | |
Vgs(th) (Max) @ Id | - | |
Gate Charge (Qg) (Max) @ Vgs | 1.57 nC @ 10 V | |
Vgs (Max) | ±10V | |
Input Capacitance (Ciss) (Max) @ Vds | 6.6 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 250mW (Ta) | |
Operating Temperature | 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | SC-59-3/CP3 | |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
5LN01C-TB-E Datasheet Download
5LN01C-TB-E Overview
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