PSMN011-30YL,115
PSMN011-30YL,115
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NXP USA Inc

PSMN011-30YL,115


PSMN011-30YL,115
F2461-PSMN011-30YL,115
Active
MOSFET N-CH 30V 51A LFPAK56
SC-100, SOT-669

PSMN011-30YL,115 ECAD Model


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PSMN011-30YL,115 Attributes


Type Description Select
Series TrenchMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 51A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 726 pF @ 15 V
FET Feature -
Power Dissipation (Max) 49W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669

PSMN011-30YL,115 Overview


NXP USA Inc offers a wide range of electronic components for various applications, and one such component is the PSMN011-30YL,115. This component can be purchased from FMALL, a reputable supplier of electronic components.

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NXP USA Inc is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

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