
NXP USA Inc
BSP100,135
BSP100,135 ECAD Model
BSP100,135 Attributes
Type | Description | Select |
---|---|---|
Series | TrenchMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 30 V | |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V | |
Vgs(th) (Max) @ Id | 2.8V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 20 V | |
FET Feature | - | |
Power Dissipation (Max) | 8.3W (Tc) | |
Operating Temperature | -65°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | SOT-223 | |
Package / Case | TO-261-4, TO-261AA |
BSP100,135 Overview
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