HXY MOSFET
MJD122-HXY
MJD122-HXY ECAD Model
MJD122-HXY Attributes
| Type | Description | Select |
|---|---|---|
| Collector Cut-Off Current (Icbo) | 10uA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 100V | |
| Power Dissipation (Pd) | 1.5W | |
| DC Current Gain (hFE@Ic,Vce) | - | |
| Collector Current (Ic) | 8A | |
| Transition Frequency (fT) | - | |
| Transistor Type | NPN | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | - | |
| Operating Temperature | - |
MJD122-HXY Overview
HXY MOSFET offers a wide range of electronic components for various applications, and one such component is the MJD122-HXY. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the MJD122-HXY provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
If you're looking for comprehensive data on the MJD122-HXY to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.
HXY MOSFET is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.
