VP2110K1-G
VP2110K1-G
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Microchip Technology Inc

VP2110K1-G


VP2110K1-G
F8-VP2110K1-G
Active
MOSFET P-CH 100V 120MA TO236AB
TO-236-3, SC-59, SOT-23-3

VP2110K1-G ECAD Model


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VP2110K1-G Attributes


Type Description Select
Series -
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 120mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 12Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
FET Feature -
Power Dissipation (Max) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-236AB (SOT23)
Package / Case TO-236-3, SC-59, SOT-23-3

VP2110K1-G Overview


Microchip Technology Inc offers a wide range of electronic components for various applications, and one such component is the VP2110K1-G. This component can be purchased from FMALL, a reputable supplier of electronic components.

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17,440 In Stock


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Unit Price: $0.504
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.4687 $0.4687
10+ $0.4637 $4.6368
100+ $0.4385 $43.8480
1000+ $0.4133 $206.6400
10000+ $0.3780 $378.0000
The price is for reference only, please refer to the actual quotation!

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