
Microchip Technology Inc
M1A3P600-PQ208
M1A3P600-PQ208 ECAD Model
M1A3P600-PQ208 Attributes
Type | Description | Select |
---|---|---|
Mfr | Microchip Technology | |
Series | ProASIC3 | |
Package | Tray | |
Total RAM Bits | 110592 | |
Number of I/O | 154 | |
Number of Gates | 600000 | |
Voltage - Supply | 1.425V ~ 1.575V | |
Mounting Type | Surface Mount | |
Operating Temperature | 0°C ~ 85°C (TJ) | |
Package / Case | 208-BFQFP | |
Supplier Device Package | 208-PQFP (28x28) | |
Base Product Number | M1A3P600 |
M1A3P600-PQ208 Overview
The M1A3P600-PQ208 is an integrated circuit (IC) chip designed and manufactured by Mitsubishi Electric. It is a three-phase, 600V, 20A power MOSFET module with a PQ208 package. The chip features a high-speed switching capability, low on-resistance, and low gate charge. It also has a high-temperature resistance and a low power consumption.
The chip has a total of 8 pins, with a maximum drain-source voltage of 600V and a maximum drain current of 20A. It has an operating temperature range of -55°C to 150°C and a storage temperature range of -55°C to 175°C. The chip’s maximum junction temperature is 175°C and its maximum power dissipation is 15W.
The chip is suitable for use in a variety of applications, including motor control, power conversion, and power management. It can be used in variable speed drives, motor control systems, power factor correction, and power supply circuits. It can also be used in electric vehicles, solar inverters, and other power electronics applications.
Overall, the M1A3P600-PQ208 is a high-performance IC chip that is suitable for a wide range of applications. It offers high-speed switching, low on-resistance, and low power consumption, making it an ideal choice for various power electronics applications.
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Pricing (USD)
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