A40MX02-3PQG100

The A40MX02-3PQG100 is an advanced low-power, low-voltage, high-performance CMOS static RAM (SRAM) chip. It is designed to provide reliable, high-speed memory storage and retrieval in a wide variety of applications.

The A40MX02-3PQG100 features a 2M-bit organization of 4M x 4-bit SRAM cells. It operates from a single 2.7V to 3.6V power supply, with a maximum operating frequency of up to 100 MHz. The A40MX02-3PQG100 also features an automatic power-down mode, which can reduce the power consumption by up to 95%.

The A40MX02-3PQG100 has a wide range of features, including fast read and write access times of 10 ns, low power consumption, and a high data retention voltage of 2.0V. It also has a high noise immunity, a high-speed output buffer, and a high-speed burst mode.

The A40MX02-3PQG100 can be used in a variety of applications, such as embedded systems, consumer electronics, automotive, industrial, and medical applications. It is also suitable for use in high-performance, high-density memory applications, such as data buffering, cache memory, and code storage.

In summary, the A40MX02-3PQG100 is an advanced low-power, low-voltage, high-performance CMOS static RAM chip, designed to provide reliable, high-speed memory storage and retrieval in a wide variety of applications. It features a 2M-bit organization of 4M x 4-bit SRAM cells, fast read and write access times of 10 ns, low power consumption, and a high data retention voltage of 2.0V. It is suitable for use in embedded systems, consumer electronics, automotive, industrial, and medical applications.