OR3T307BA256-DB

The OR3T307BA256-DB is a 256-bit, low-power, low-voltage, fully synchronous, dual-port, static random-access memory (SRAM) chip. It is designed to be used in a wide variety of applications, including embedded systems, digital signal processing, and telecommunications.

The chip features a 256-bit memory array that can store up to 64 words of 32-bits each. It is organized as two independent 128-bit ports, making it ideal for applications that require simultaneous access to both ports. The chip also features a high-speed, single-cycle write access time of 10 ns, and a low-power standby mode of less than 1 μA.

The OR3T307BA256-DB has a wide-range operating voltage of 1.7V to 3.6V, and supports both asynchronous and synchronous clocking. It also features a low-power standby mode and a high-speed write access time, making it suitable for low-power applications.

The OR3T307BA256-DB is also designed with a wide range of features, such as a high-speed write access time, low-power standby mode, and a wide range of operating voltages. It is also designed to be compatible with a variety of microcontrollers, processors, and DSPs.

In summary, the OR3T307BA256-DB is a low-power, low-voltage, fully synchronous, dual-port, static random-access memory (SRAM) chip that is designed to be used in a wide variety of applications. It features a high-speed write access time, low-power standby mode, and wide range of operating voltages, making it suitable for low-power applications. It is also designed to be compatible with a variety of microcontrollers, processors, and DSPs.