M4A5-256/128-10YNI

The M4A5-256/128-10YNI is a silicon chip model designed by the American semiconductor manufacturer, Micron Technology. It is a high-performance, low-power, embedded memory chip that combines the features of both DRAM and SRAM technologies. The chip is a dual-bank, single-ended, low-voltage synchronous dynamic RAM (SDRAM) device with a 256-bit wide data bus and a 128-bit wide address bus. It has a maximum memory capacity of 4GB and a maximum operating frequency of 1066MHz.

The chip is designed to be used in a wide range of applications, including embedded systems, automotive, industrial, medical, and consumer electronics. It is suitable for applications requiring high-speed data transfer, such as image processing, real-time signal processing, and machine learning. The chip also supports error-correction code (ECC) and parity error detection, ensuring reliable data storage and retrieval.

The chip is manufactured using the latest 65nm process technology and is RoHS compliant. It has a low-power consumption of just 1.8V, making it ideal for battery-powered applications. It is available in a range of packages, including BGA, SO-DIMM, and TSOP. The chip is also compatible with a variety of operating systems, including Linux, Windows, and Android.