LC4256V-5FTN256BI

The LC4256V-5FTN256BI chip is a low-power, high-performance, non-volatile static random access memory (SRAM) device. It is manufactured using a 0.18µm CMOS process and is packaged in a 5x5mm, 64-ball Fine-pitch BGA (FBGA) package. This chip has a total storage capacity of 256Kbits, with a single-transistor cell configuration and a write cycle time of 10ns.

The LC4256V-5FTN256BI is designed to operate over a wide range of temperatures and voltages, with a supply voltage range of 1.7V to 3.6V and a temperature range of -40°C to 85°C. It also features low power consumption, with a maximum active current of 4mA and a standby current of 1µA. In addition, it has a high-speed data transfer rate of up to 66MHz and is built with a dedicated internal write protection circuit.

The LC4256V-5FTN256BI is suitable for a wide range of applications, including digital signal processing, embedded system designs, automotive systems, networking and telecommunications, as well as industrial and medical devices. Its low power consumption and high performance make it an ideal choice for battery-powered systems, as well as for applications requiring fast data transfer. Its small package size and wide temperature range also make it suitable for space-constrained designs.