LC4256B-75TN100I

The LC4256B-75TN100I is a low-power, high-performance, low-voltage integrated circuit (IC) designed for use in a wide range of applications. It is a four-input, 256-bit static random access memory (SRAM) chip that operates at a voltage of 1.2 V. The chip features a high-speed read/write access time of 75 ns and a low-power standby mode of 0.8 µW.

The chip offers a wide range of features, including a high-performance, low-power architecture, a wide operating temperature range of -40°C to +85°C, and a wide voltage range of 1.2 V to 3.6 V. It also features a high-speed write cycle time of 15 ns, an asynchronous write cycle time of 15 ns, and a synchronous write cycle time of 30 ns. The chip also offers a data retention time of 10 ms and a data retention voltage of 1.2 V.

The LC4256B-75TN100I is ideal for use in a variety of applications, including embedded microcontrollers, embedded systems, digital signal processing, and digital logic. It is also suitable for use in automotive, industrial, and consumer applications. The chip is RoHS compliant and is available in a variety of packages, including TQFP, QFN, and BGA.

In summary, the LC4256B-75TN100I is a low-power, high-performance, low-voltage IC designed for a wide range of applications. It features a high-speed read/write access time of 75 ns, a low-power standby mode of 0.8 µW, and a wide operating temperature range of -40°C to +85°C. The chip is suitable for use in embedded microcontrollers, embedded systems, digital signal processing, and digital logic, and is available in a variety of packages.