
Lattice Semiconductor Corporation
LC4064B-25T44C
LC4064B-25T44C ECAD Model
LC4064B-25T44C Attributes
Type | Description | Select |
---|---|---|
Mfr | Lattice Semiconductor Corporation | |
Series | ispMACH® 4000B | |
Package | Tray | |
Programmable Type | In System Programmable | |
Delay Time tpd(1) Max | 2.5 ns | |
Voltage Supply - Internal | 2.3V ~ 2.7V | |
Number of Logic Elements/Blocks | 4 | |
Number of Macrocells | 64 | |
Number of I/O | 30 | |
Operating Temperature | 0°C ~ 90°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 44-TQFP | |
Supplier Device Package | 44-TQFP (10x10) | |
Base Product Number | LC4064 |
LC4064B-25T44C Datasheet Download
LC4064B-25T44C Overview
The LC4064B-25T44C is a low-cost, low-power, low-voltage CMOS static RAM (SRAM) chip designed for use in a variety of applications. It has a capacity of 64K x 8 bits, and is organized as 8K x 8 bits. It is supplied in a 44-pin TQFP package and has a maximum operating voltage of 2.7V.
The LC4064B-25T44C provides a wide range of features, including a fast access time of 25ns, a low power consumption of 50mA (max), a high speed burst mode, and a low power standby mode. It also features an asynchronous interface and is compatible with 3.3V and 5V logic. It has an operating temperature range of -40°C to +85°C.
The LC4064B-25T44C is suitable for use in a variety of applications, including embedded systems, portable communication devices, automotive systems, industrial control systems, and consumer electronics. It is also suitable for use in applications where low power consumption and low voltage operation are required.
The LC4064B-25T44C is a highly reliable chip, with a mean time between failures (MTBF) of over 1 million hours. It also has a built-in self-test feature, which can detect and correct any errors in the memory array.
Overall, the LC4064B-25T44C is an ideal choice for a variety of applications that require low power consumption, low voltage operation, and high reliability. It is a cost-effective solution that is easy to use and provides a reliable, high-performance memory solution.
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