ICE65L04F-TCB196C

The ICE65L04F-TCB196C is a low-power, high-performance, low-voltage CMOS static RAM (SRAM) chip. It is designed to operate at a voltage range of 2.5V to 3.6V and is ideal for use in battery-powered applications. It provides a wide range of features, including a high-speed access time of 10ns, a low active power consumption of 10mW, and a low standby current of 0.1uA.

The chip is organized as 4,194,304 bits and is fabricated using the latest CMOS technology. It is available in a 196-pin TQFP package and is RoHS compliant. The ICE65L04F-TCB196C is designed to provide high performance and reliability, with features such as error correction, data retention, and write protection.

The ICE65L04F-TCB196C is suitable for a wide range of applications, including embedded systems, industrial automation, medical instrumentation, consumer electronics, and automotive applications. It is also suitable for use in a variety of memory applications, such as code storage, data buffering, and FIFO storage.

Overall, the ICE65L04F-TCB196C is an ideal choice for a wide range of low-power, low-voltage applications that require high performance and reliable operation. It offers a wide range of features, including a low-power consumption, high-speed access time, and a wide range of features, making it suitable for a variety of applications.