10AX115R2F40I2SGES

The 10AX115R2F40I2SGES is a high-performance integrated circuit (IC) chip manufactured by ON Semiconductor. It is a dual-channel N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that has a maximum drain-source voltage of 40 V and a maximum drain current of 115 A. It has a low on-resistance of 2.0 mΩ and a high-speed switching capability of up to 40 V/ns.

The 10AX115R2F40I2SGES chip is designed for use in a wide range of applications, such as power management, motor control, and load switching. It is suitable for use in high-current and high-voltage applications. It also has a low gate-charge and a low gate-resistance, which makes it ideal for high-frequency switching applications. The chip also features a low thermal resistance and a low input capacitance, which makes it suitable for high-efficiency operation.

The 10AX115R2F40I2SGES chip is designed to meet the requirements of the automotive, industrial, and consumer markets. It is designed to be used in a wide variety of applications, such as power supplies, motor control, and load switching. It is also suitable for use in high-current and high-voltage applications. The chip is RoHS-compliant and is available in a variety of packages, such as DPAK, TO-220, and TO-247.

Overall, the 10AX115R2F40I2SGES chip is a high-performance and high-efficiency IC chip that is suitable for a wide range of applications. It has a low on-resistance, a high-speed switching capability, and a low thermal resistance, which makes it ideal for high-current and high-voltage applications. It is also RoHS-compliant and is available in a variety of packages, making it suitable for a wide range of applications.