ISZ0901NLSATMA1
ISZ0901NLSATMA1
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Infineon Technologies

ISZ0901NLSATMA1


ISZ0901NLSATMA1
F2465-ISZ0901NLSATMA1
Active
25V, N-CH MOSFET, LOGIC LEVEL, P
8-PowerTDFN

ISZ0901NLSATMA1 ECAD Model


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ISZ0901NLSATMA1 Attributes


Type Description Select
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 12 V
FET Feature -
Power Dissipation (Max) 26W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-25
Package / Case 8-PowerTDFN

ISZ0901NLSATMA1 Datasheet Download


ISZ0901NLSATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the ISZ0901NLSATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

24,610 In Stock


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Unit Price: $0.6222
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.5786 $0.5786
10+ $0.5724 $5.7242
100+ $0.5413 $54.1314
1000+ $0.5102 $255.1020
10000+ $0.4667 $466.6500
The price is for reference only, please refer to the actual quotation!

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