IRFSL4410PBF
IRFSL4410PBF
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Infineon Technologies

IRFSL4410PBF


IRFSL4410PBF
F2465-IRFSL4410PBF
Active
MOSFET N-CH 100V 88A TO262
TO-262-3 Long Leads, I²Pak, TO-262AA

IRFSL4410PBF ECAD Model


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IRFSL4410PBF Attributes


Type Description Select
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5150 pF @ 50 V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IRFSL4410PBF Datasheet Download


IRFSL4410PBF Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IRFSL4410PBF. This component can be purchased from FMALL, a reputable supplier of electronic components.

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If you're looking for comprehensive data on the IRFSL4410PBF to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

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