IRFR9N20DTR
IRFR9N20DTR
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Infineon Technologies

IRFR9N20DTR


IRFR9N20DTR
F2465-IRFR9N20DTR
Active
MOSFET N-CH 200V 9.4A DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR9N20DTR ECAD Model


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IRFR9N20DTR Attributes


Type Description Select
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 560 pF @ 25 V
FET Feature -
Power Dissipation (Max) 86W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR9N20DTR Datasheet Download


IRFR9N20DTR Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IRFR9N20DTR. This component can be purchased from FMALL, a reputable supplier of electronic components.

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