IRFB59N10DPBF
IRFB59N10DPBF
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Infineon Technologies

IRFB59N10DPBF


IRFB59N10DPBF
F2465-IRFB59N10DPBF
Active
MOSFET N-CH 100V 59A TO220AB
TO-220-3

IRFB59N10DPBF ECAD Model


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IRFB59N10DPBF Attributes


Type Description Select
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 35.4A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2450 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

IRFB59N10DPBF Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IRFB59N10DPBF. This component can be purchased from FMALL, a reputable supplier of electronic components.

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16,660 In Stock


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Unit Price: $2.3212
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $2.1587 $2.1587
10+ $2.1355 $21.3550
100+ $2.0194 $201.9444
1000+ $1.9034 $951.6920
10000+ $1.7409 $1,740.9000
The price is for reference only, please refer to the actual quotation!

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