IRFB4710PBF
IRFB4710PBF
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Infineon Technologies

IRFB4710PBF


IRFB4710PBF
F2465-IRFB4710PBF
Active
MOSFET N-CH 100V 75A TO220AB
TO-220-3

IRFB4710PBF ECAD Model


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IRFB4710PBF Attributes


Type Description Select
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6160 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

IRFB4710PBF Datasheet Download


IRFB4710PBF Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IRFB4710PBF. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

15,410 In Stock


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Unit Price: $1.8893
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $1.7570 $1.7570
10+ $1.7382 $17.3816
100+ $1.6437 $164.3691
1000+ $1.5492 $774.6130
10000+ $1.4170 $1,416.9750
The price is for reference only, please refer to the actual quotation!

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