IRFB4229PBF
IRFB4229PBF
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Infineon Technologies

IRFB4229PBF


IRFB4229PBF
F2465-IRFB4229PBF
Active
MOSFET N-CH 250V 46A TO220AB
TO-220-3

IRFB4229PBF ECAD Model


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IRFB4229PBF Attributes


Type Description Select
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 46mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4560 pF @ 25 V
FET Feature -
Power Dissipation (Max) 330W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

IRFB4229PBF Datasheet Download


IRFB4229PBF Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IRFB4229PBF. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

37,230 In Stock


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Unit Price: $2.1029
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $1.9557 $1.9557
10+ $1.9347 $19.3467
100+ $1.8295 $182.9523
1000+ $1.7244 $862.1890
10000+ $1.5772 $1,577.1750
The price is for reference only, please refer to the actual quotation!

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