IRFB31N20DPBF
IRFB31N20DPBF
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Infineon Technologies

IRFB31N20DPBF


IRFB31N20DPBF
F2465-IRFB31N20DPBF
Active
MOSFET N-CH 200V 31A TO220AB
TO-220-3

IRFB31N20DPBF ECAD Model


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IRFB31N20DPBF Attributes


Type Description Select
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2370 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

IRFB31N20DPBF Datasheet Download


IRFB31N20DPBF Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IRFB31N20DPBF. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

22,320 In Stock


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Unit Price: $3.321
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $3.0885 $3.0885
10+ $3.0553 $30.5532
100+ $2.8893 $288.9270
1000+ $2.7232 $1,361.6100
10000+ $2.4908 $2,490.7500
The price is for reference only, please refer to the actual quotation!

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