IRF9Z34NSPBF
IRF9Z34NSPBF
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Infineon Technologies

IRF9Z34NSPBF


IRF9Z34NSPBF
F2465-IRF9Z34NSPBF
Active
MOSFET P-CH 55V 19A D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF9Z34NSPBF ECAD Model


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IRF9Z34NSPBF Attributes


Type Description Select
Series HEXFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF9Z34NSPBF Datasheet Download


IRF9Z34NSPBF Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IRF9Z34NSPBF. This component can be purchased from FMALL, a reputable supplier of electronic components.

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