IRF8707GPBF
IRF8707GPBF
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Infineon Technologies

IRF8707GPBF


IRF8707GPBF
F2465-IRF8707GPBF
Active
MOSFET N-CH 30V 11A 8SO
8-SOIC (0.154", 3.90mm Width)

IRF8707GPBF ECAD Model


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IRF8707GPBF Attributes


Type Description Select
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.9mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

IRF8707GPBF Datasheet Download


IRF8707GPBF Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IRF8707GPBF. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

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