IRF5802TRPBF
IRF5802TRPBF
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Infineon Technologies

IRF5802TRPBF


IRF5802TRPBF
F2465-IRF5802TRPBF
Active
MOSFET N-CH 150V 900MA MICRO6
SOT-23-6 Thin, TSOT-23-6

IRF5802TRPBF ECAD Model


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IRF5802TRPBF Attributes


Type Description Select
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 540mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 88 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package Micro6™(TSOP-6)
Package / Case SOT-23-6 Thin, TSOT-23-6

IRF5802TRPBF Datasheet Download


IRF5802TRPBF Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IRF5802TRPBF. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

13,290 In Stock


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Unit Price: $0.2796
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.2600 $0.2600
10+ $0.2572 $2.5723
100+ $0.2433 $24.3252
1000+ $0.2293 $114.6360
10000+ $0.2097 $209.7000
The price is for reference only, please refer to the actual quotation!

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