IRF5801TRPBF
IRF5801TRPBF
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Infineon Technologies

IRF5801TRPBF


IRF5801TRPBF
F2465-IRF5801TRPBF
Active
MOSFET N-CH 200V 600MA MICRO6
SOT-23-6 Thin, TSOT-23-6

IRF5801TRPBF ECAD Model


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IRF5801TRPBF Attributes


Type Description Select
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.9 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 88 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package Micro6™(TSOP-6)
Package / Case SOT-23-6 Thin, TSOT-23-6

IRF5801TRPBF Datasheet Download


IRF5801TRPBF Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IRF5801TRPBF. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

43,260 In Stock


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Unit Price: $0.8575
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.7975 $0.7975
10+ $0.7889 $7.8890
100+ $0.7460 $74.6025
1000+ $0.7032 $351.5750
10000+ $0.6431 $643.1250
The price is for reference only, please refer to the actual quotation!

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