IRF200P222
IRF200P222
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Infineon Technologies

IRF200P222


IRF200P222
F2465-IRF200P222
Active
MOSFET N-CH 200V 182A TO247AC
TO-247-3

IRF200P222 ECAD Model


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IRF200P222 Attributes


Type Description Select
Series StrongIRFET™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 182A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.6mOhm @ 82A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 203 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9820 pF @ 50 V
FET Feature -
Power Dissipation (Max) 556W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3

IRF200P222 Datasheet Download


IRF200P222 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IRF200P222. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

1,840 In Stock


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Unit Price: $5.1576
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $4.7966 $4.7966
10+ $4.7450 $47.4499
100+ $4.4871 $448.7112
1000+ $4.2292 $2,114.6160
10000+ $3.8682 $3,868.2000
The price is for reference only, please refer to the actual quotation!

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