Infineon Technologies
IRF100B202
IRF100B202 ECAD Model
IRF100B202 Attributes
| Type | Description | Select |
|---|---|---|
| Series | HEXFET®, StrongIRFET™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 97A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 58A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 150µA | |
| Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4476 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 221W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
IRF100B202 Datasheet Download
IRF100B202 Overview
Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IRF100B202. This component can be purchased from FMALL, a reputable supplier of electronic components.
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