IPT111N20NFDATMA1
IPT111N20NFDATMA1
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Infineon Technologies

IPT111N20NFDATMA1


IPT111N20NFDATMA1
F2465-IPT111N20NFDATMA1
Active
MOSFET N-CH 200V 96A 8HSOF
8-PowerSFN

IPT111N20NFDATMA1 ECAD Model


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IPT111N20NFDATMA1 Attributes


Type Description Select
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.1mOhm @ 96A, 10V
Vgs(th) (Max) @ Id 4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 100 V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN

IPT111N20NFDATMA1 Datasheet Download


IPT111N20NFDATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IPT111N20NFDATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

17,860 In Stock


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Unit Price: $15.6718
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $14.5748 $14.5748
10+ $14.4181 $144.1806
100+ $13.6345 $1,363.4466
1000+ $12.8509 $6,425.4380
10000+ $11.7539 $11,753.8500
The price is for reference only, please refer to the actual quotation!

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