IPT022N10NF2SATMA1
IPT022N10NF2SATMA1
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Infineon Technologies

IPT022N10NF2SATMA1


IPT022N10NF2SATMA1
F2465-IPT022N10NF2SATMA1
Active
MOSFET
8-PowerSFN

IPT022N10NF2SATMA1 ECAD Model


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IPT022N10NF2SATMA1 Attributes


Type Description Select
Series StrongIRFET™ 2
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 236A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.25mOhm @ 150A, 10V
Vgs(th) (Max) @ Id 3.8V @ 169µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8
Package / Case 8-PowerSFN

IPT022N10NF2SATMA1 Datasheet Download


IPT022N10NF2SATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IPT022N10NF2SATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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9,700 In Stock


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Unit Price: $8.744
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $8.1319 $8.1319
10+ $8.0445 $80.4448
100+ $7.6073 $760.7280
1000+ $7.1701 $3,585.0400
10000+ $6.5580 $6,558.0000
The price is for reference only, please refer to the actual quotation!

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