IPI65R190C
IPI65R190C
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Infineon Technologies

IPI65R190C


IPI65R190C
F2465-IPI65R190C
Active
N-CHANNEL POWER MOSFET
TO-262-3 Long Leads, I²Pak, TO-262AA

IPI65R190C ECAD Model


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IPI65R190C Attributes


Type Description Select
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 100 V
FET Feature -
Power Dissipation (Max) 151W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IPI65R190C Datasheet Download


IPI65R190C Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IPI65R190C. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

14,330 In Stock


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Unit Price: $2.0429
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $1.8999 $1.8999
10+ $1.8795 $18.7947
100+ $1.7773 $177.7323
1000+ $1.6752 $837.5890
10000+ $1.5322 $1,532.1750
The price is for reference only, please refer to the actual quotation!

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