IPF10N03LA G
IPF10N03LA G
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Infineon Technologies

IPF10N03LA G


IPF10N03LA G
F2465-IPF10N03LA G
Active
MOSFET N-CH 25V 30A TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63

IPF10N03LA G ECAD Model


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IPF10N03LA G Attributes


Type Description Select
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1358 pF @ 15 V
FET Feature -
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-23
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPF10N03LA G Datasheet Download


IPF10N03LA G Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IPF10N03LA G. This component can be purchased from FMALL, a reputable supplier of electronic components.

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