IPD80R900P7ATMA1
IPD80R900P7ATMA1
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Infineon Technologies

IPD80R900P7ATMA1


IPD80R900P7ATMA1
F2465-IPD80R900P7ATMA1
Active
MOSFET N-CH 800V 6A TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63

IPD80R900P7ATMA1 ECAD Model


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IPD80R900P7ATMA1 Attributes


Type Description Select
Series CoolMOS™ P7
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 500 V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD80R900P7ATMA1 Datasheet Download


IPD80R900P7ATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IPD80R900P7ATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

3,620 In Stock


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Unit Price: $2.2537
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $2.0959 $2.0959
10+ $2.0734 $20.7340
100+ $1.9607 $196.0719
1000+ $1.8480 $924.0170
10000+ $1.6903 $1,690.2750
The price is for reference only, please refer to the actual quotation!

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