IPD50P04P4L11AUMA1
IPD50P04P4L11AUMA1
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Infineon Technologies

IPD50P04P4L11AUMA1


IPD50P04P4L11AUMA1
F2465-IPD50P04P4L11AUMA1
Active
MOSFET
TO-252-3, DPak (2 Leads + Tab), SC-63

IPD50P04P4L11AUMA1 ECAD Model


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IPD50P04P4L11AUMA1 Attributes


Type Description Select
Series OptiMOS®-P2
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Vgs (Max) +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V
FET Feature -
Power Dissipation (Max) 58W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD50P04P4L11AUMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IPD50P04P4L11AUMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

The product page for the IPD50P04P4L11AUMA1 provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.

If you're looking for comprehensive data on the IPD50P04P4L11AUMA1 to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

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