IPB043N10NF2SATMA1
IPB043N10NF2SATMA1
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Infineon Technologies

IPB043N10NF2SATMA1


IPB043N10NF2SATMA1
F2465-IPB043N10NF2SATMA1
Active
AUTOMOTIVE MOSFET
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB043N10NF2SATMA1 ECAD Model


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IPB043N10NF2SATMA1 Attributes


Type Description Select
Series StrongIRFET™ 2
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 135A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.35mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.8V @ 93µA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB043N10NF2SATMA1 Datasheet Download


IPB043N10NF2SATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IPB043N10NF2SATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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6,010 In Stock


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Unit Price: $0.8735
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.8124 $0.8124
10+ $0.8036 $8.0362
100+ $0.7599 $75.9945
1000+ $0.7163 $358.1350
10000+ $0.6551 $655.1250
The price is for reference only, please refer to the actual quotation!

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