IPB029N06N3GATMA1
IPB029N06N3GATMA1
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Infineon Technologies

IPB029N06N3GATMA1


IPB029N06N3GATMA1
F2465-IPB029N06N3GATMA1
Active
MOSFET N-CH 60V 120A D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB029N06N3GATMA1 ECAD Model


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IPB029N06N3GATMA1 Attributes


Type Description Select
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 118µA
Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 30 V
FET Feature -
Power Dissipation (Max) 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB029N06N3GATMA1 Datasheet Download


IPB029N06N3GATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IPB029N06N3GATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

34,330 In Stock


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Unit Price: $4.6314
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $4.3072 $4.3072
10+ $4.2609 $42.6089
100+ $4.0293 $402.9318
1000+ $3.7977 $1,898.8740
10000+ $3.4736 $3,473.5500
The price is for reference only, please refer to the actual quotation!

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