IPB027N10N3GATMA1
IPB027N10N3GATMA1
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Infineon Technologies

IPB027N10N3GATMA1


IPB027N10N3GATMA1
F2465-IPB027N10N3GATMA1
Active
MOSFET N-CH 100V 120A D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB027N10N3GATMA1 ECAD Model


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IPB027N10N3GATMA1 Attributes


Type Description Select
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14800 pF @ 50 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB027N10N3GATMA1 Datasheet Download


IPB027N10N3GATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IPB027N10N3GATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

38,170 In Stock


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Unit Price: $2.7515
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $2.5589 $2.5589
10+ $2.5314 $25.3138
100+ $2.3938 $239.3805
1000+ $2.2562 $1,128.1150
10000+ $2.0636 $2,063.6250
The price is for reference only, please refer to the actual quotation!

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