IMZA65R083M1HXKSA1
IMZA65R083M1HXKSA1
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Infineon Technologies

IMZA65R083M1HXKSA1


IMZA65R083M1HXKSA1
F2465-IMZA65R083M1HXKSA1
Active
SILICON CARBIDE MOSFET, PG-TO247
TO-247-4

IMZA65R083M1HXKSA1 ECAD Model


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IMZA65R083M1HXKSA1 Attributes


Type Description Select
Series CoolSiC™
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 111mOhm @ 11.2A, 18V
Vgs(th) (Max) @ Id 5.7V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 18 V
Vgs (Max) +20V, -2V
Input Capacitance (Ciss) (Max) @ Vds 624 pF @ 400 V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-4-3
Package / Case TO-247-4

IMZA65R083M1HXKSA1 Datasheet Download


IMZA65R083M1HXKSA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IMZA65R083M1HXKSA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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If you're looking for comprehensive data on the IMZA65R083M1HXKSA1 to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

8,980 In Stock


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Unit Price: $19.5955
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $18.2238 $18.2238
10+ $18.0279 $180.2786
100+ $17.0481 $1,704.8085
1000+ $16.0683 $8,034.1550
10000+ $14.6966 $14,696.6250
The price is for reference only, please refer to the actual quotation!

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