IMZ120R090M1HXKSA1
IMZ120R090M1HXKSA1
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Infineon Technologies

IMZ120R090M1HXKSA1


IMZ120R090M1HXKSA1
F2465-IMZ120R090M1HXKSA1
Active
SICFET N-CH 1.2KV 26A TO247-4
TO-247-4

IMZ120R090M1HXKSA1 ECAD Model


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IMZ120R090M1HXKSA1 Attributes


Type Description Select
Series CoolSiC™
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id 5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 800 V
FET Feature -
Power Dissipation (Max) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-4-1
Package / Case TO-247-4

IMZ120R090M1HXKSA1 Datasheet Download


IMZ120R090M1HXKSA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IMZ120R090M1HXKSA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

29,620 In Stock


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Unit Price: $11.9527
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $11.1160 $11.1160
10+ $10.9965 $109.9648
100+ $10.3988 $1,039.8849
1000+ $9.8012 $4,900.6070
10000+ $8.9645 $8,964.5250
The price is for reference only, please refer to the actual quotation!

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