IMW65R027M1HXKSA1
IMW65R027M1HXKSA1
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Infineon Technologies

IMW65R027M1HXKSA1


IMW65R027M1HXKSA1
F2465-IMW65R027M1HXKSA1
Active
MOSFET 650V NCH SIC TRENCH
TO-247-3

IMW65R027M1HXKSA1 ECAD Model


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IMW65R027M1HXKSA1 Attributes


Type Description Select
Series CoolSIC™ M1
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 34mOhm @ 38.3A, 18V
Vgs(th) (Max) @ Id 5.7V @ 11mA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 18 V
Vgs (Max) +23V, -5V
Input Capacitance (Ciss) (Max) @ Vds 2131 pF @ 400 V
FET Feature -
Power Dissipation (Max) 189W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3

IMW65R027M1HXKSA1 Datasheet Download


IMW65R027M1HXKSA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IMW65R027M1HXKSA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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If you're looking for comprehensive data on the IMW65R027M1HXKSA1 to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

46,680 In Stock


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Unit Price: $20.9034
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $19.4402 $19.4402
10+ $19.2311 $192.3113
100+ $18.1860 $1,818.5958
1000+ $17.1408 $8,570.3940
10000+ $15.6776 $15,677.5500
The price is for reference only, please refer to the actual quotation!

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