IMW120R045M1XKSA1
IMW120R045M1XKSA1
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Infineon Technologies

IMW120R045M1XKSA1


IMW120R045M1XKSA1
F2465-IMW120R045M1XKSA1
Active
SICFET N-CH 1.2KV 52A TO247-3
TO-247-3

IMW120R045M1XKSA1 ECAD Model


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IMW120R045M1XKSA1 Attributes


Type Description Select
Series CoolSiC™
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 15 V
Vgs (Max) +20V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 800 V
FET Feature -
Power Dissipation (Max) 228W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3

IMW120R045M1XKSA1 Datasheet Download


IMW120R045M1XKSA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IMW120R045M1XKSA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

12,250 In Stock


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Unit Price: $16.392
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $15.2446 $15.2446
10+ $15.0806 $150.8064
100+ $14.2610 $1,426.1040
1000+ $13.4414 $6,720.7200
10000+ $12.2940 $12,294.0000
The price is for reference only, please refer to the actual quotation!

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