IMBG120R030M1HXTMA1
IMBG120R030M1HXTMA1
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Infineon Technologies

IMBG120R030M1HXTMA1


IMBG120R030M1HXTMA1
F2465-IMBG120R030M1HXTMA1
Active
SICFET N-CH 1.2KV 56A TO263
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

IMBG120R030M1HXTMA1 ECAD Model


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IMBG120R030M1HXTMA1 Attributes


Type Description Select
Series CoolSiC™
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 41mOhm @ 25A, 18V
Vgs(th) (Max) @ Id 5.7V @ 11.5mA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
Vgs (Max) +18V, -15V
Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 800 V
FET Feature Standard
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-12
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

IMBG120R030M1HXTMA1 Datasheet Download


IMBG120R030M1HXTMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IMBG120R030M1HXTMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

46,350 In Stock


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Unit Price: $25.3156
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $23.5435 $23.5435
10+ $23.2904 $232.9035
100+ $22.0246 $2,202.4572
1000+ $20.7588 $10,379.3960
10000+ $18.9867 $18,986.7000
The price is for reference only, please refer to the actual quotation!

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