IGT60R190D1SATMA1
IGT60R190D1SATMA1
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Infineon Technologies

IGT60R190D1SATMA1


IGT60R190D1SATMA1
F2465-IGT60R190D1SATMA1
Active
GANFET N-CH 600V 12.5A 8HSOF
8-PowerSFN

IGT60R190D1SATMA1 ECAD Model


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IGT60R190D1SATMA1 Attributes


Type Description Select
Series CoolGaN™
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -10V
Input Capacitance (Ciss) (Max) @ Vds 157 pF @ 400 V
FET Feature -
Power Dissipation (Max) 55.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-3
Package / Case 8-PowerSFN

IGT60R190D1SATMA1 Datasheet Download


IGT60R190D1SATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IGT60R190D1SATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

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