IAUT200N08S5N023ATMA1
IAUT200N08S5N023ATMA1
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Infineon Technologies

IAUT200N08S5N023ATMA1


IAUT200N08S5N023ATMA1
F2465-IAUT200N08S5N023ATMA1
Active
MOSFET N-CH 80V 200A 8HSOF
8-PowerSFN

IAUT200N08S5N023ATMA1 ECAD Model


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IAUT200N08S5N023ATMA1 Attributes


Type Description Select
Series OptiMOS™-5
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7670 pF @ 40 V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN

IAUT200N08S5N023ATMA1 Datasheet Download


IAUT200N08S5N023ATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IAUT200N08S5N023ATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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If you're looking for comprehensive data on the IAUT200N08S5N023ATMA1 to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

14,960 In Stock


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Unit Price: $3.8899
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $3.6176 $3.6176
10+ $3.5787 $35.7871
100+ $3.3842 $338.4213
1000+ $3.1897 $1,594.8590
10000+ $2.9174 $2,917.4250
The price is for reference only, please refer to the actual quotation!

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