IAUS165N08S5N029ATMA1
IAUS165N08S5N029ATMA1
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Infineon Technologies

IAUS165N08S5N029ATMA1


IAUS165N08S5N029ATMA1
F2465-IAUS165N08S5N029ATMA1
Active
MOSFET N-CH 80V 165A HSOG-8
8-PowerSMD, Gull Wing

IAUS165N08S5N029ATMA1 ECAD Model


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IAUS165N08S5N029ATMA1 Attributes


Type Description Select
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 165A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6370 pF @ 40 V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-HSOG-8-1
Package / Case 8-PowerSMD, Gull Wing

IAUS165N08S5N029ATMA1 Datasheet Download


IAUS165N08S5N029ATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IAUS165N08S5N029ATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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29,400 In Stock


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Unit Price: $4.1753
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Pricing (USD)

QTY Unit Price Ext Price
1+ $3.8830 $3.8830
10+ $3.8413 $38.4128
100+ $3.6325 $363.2511
1000+ $3.4237 $1,711.8730
10000+ $3.1315 $3,131.4750
The price is for reference only, please refer to the actual quotation!

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